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    • 专利摘要:
    Method of determining a local electric field and / or a local magnetic field in a sample and / or the dielectric constant of a material and / or the angle between the input and output surfaces of the sample, comprising the steps: - illumination of the sample by an electron beam in precession mode by means of an illumination device, - establishment of a diffraction pattern, - determination of the disc offset corresponding to the beam transmitted from the electric field and / or the magnetic field, by comparison of the diffraction pattern and a reference diffraction pattern, - determination of a deflection angle of the transmitted beam, - determination of the value of the local electric field and or the local magnetic field of the sample and / or determination of the material dielectric constant and / or determination of the angle between the input and output surfaces of the sample.
    公开号:FR3055970A1
    申请号:FR1753992
    申请日:2017-05-05
    公开日:2018-03-16
    发明作者:David Cooper；Benedikt HAAS；Jean-Luc Rouviere
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Holder (s): COMMISSIONER OF ATOMIC ENERGY AND ALTERNATIVE ENERGIES Public establishment.
    Extension request (s)
    Agent (s): BREVALEX Limited liability company.
    FR 3 055 970 - A1 (04) METHOD FOR DETERMINING THE DEFLECTION OF AN ELECTRON BEAM RESULTING FROM AN ELECTRIC FIELD AND / OR A MAGNETIC FIELD.
    ©) Method for determining a local electric field and / or a local magnetic field in a sample and / or the dielectric constant of a material and / or the angle between the input and output surfaces of the sample, comprising the steps:
    - illumination of the sample by an electron beam in precession mode by means of an illumination device,
    - establishment of a diffraction pattern,
    - determination of the disc offset corresponding to the beam transmitted from the electric field and / or the magnetic field, by comparison of the diffraction plate and a reference diffraction plate,
    - determination of a deflection angle of the transmitted beam,
    - determination of the value of the local electric field and / or the local magnetic field of the sample and / or determination of the dielectric constant of materials and / or determination of the angle between the input and output surfaces of the sample.
    METHOD FOR DETERMINING THE DEFLECTION OF AN ELECTRON BEAM RESULTING FROM AN ELECTRIC FIELD AND / OR A MAGNETIC FIELD
    DESCRIPTION
    TECHNICAL AREA AND PRIOR ART
    The present invention relates to a method for determining the deflection of an electron beam resulting from a local electric field and / or a local magnetic field and to a method for determining the value of said local electric field and / or local magnetic field in a sample and / or properties and / or characteristics of a sample.
    It is interesting to be able to detect and quantify local electric fields and magnetic fields with nanometric resolution in different media. Knowledge of the presence and values of these fields makes it possible to obtain information on phenomena generating such fields, for example such as the piezoelectric effect, the accumulation of charges, the dopant gradients, the presence of depletion areas.
    The presence of an electric field or a magnetic field deflects the trajectory of an electron beam. By determining this deviation or deflection, it is possible to determine the value of the electric field or the magnetic field or other properties and / or characteristics of the sample knowing the value of the electric field or the magnetic field.
    There are several methods for measuring this influence and therefore determining, for example, the values of these fields, including electronic holography, either off-axis or online, which enables nanometric resolution to be achieved. But this method presents problems of spatial resolution. In addition, it is complex to implement.
    There is also the method called Differential Phase Contrast or DPC (Differential Phase Contrast in English terminology) using segmented ring detectors having opposite segments two by two. This method is for example described in the document Shiboto et al, Differential phase-contrast microscopy atomic resolution, Nature Phys. FLIGHT. 8- pp 611-615 (2012). The deflection of the electron beam due to the presence of an electric or magnetic field is detected by making the difference between the measurements obtained from the opposite segments of the detector. This method is relatively simple to implement, but it offers a low sensitivity, is not easily quantitative and it is very sensitive to the effects of diffraction.
    Another method measuring the center of gravity of the disc of the beam transmitted in diffraction mode described in the document Nguyen et al, Lorentz-STEM imaging of Fields and Domains using a High-Speed, High-Dynamic Range Pixel Array Detector at Atomic Resolution, Microsc and Microanal. 21 (Suppl 3), 2015 pp2309-2310 offers better results. However, it suffers from an imprecision due to the superposition of the diffracted and transmitted beams and / or from variations in intensity in these beams.
    STATEMENT OF THE INVENTION
    It is therefore an object of the present invention to offer a precise method and having a nanometric resolution, making it possible to determine the effect of a local electric field and / or a local magnetic field and of a sample on a beam. of electrons, in particular on the deflection thereof, the determination of this effect making it possible in particular to determine the value of the local electric field and / or the local magnetic field or of the properties of the sample with a nanometric resolution.
    The object of the present invention is achieved by a method of determining the deflection of an electron beam resulting from a local electric field and / or a local magnetic field and in the presence of a sample, comprising the steps :
    - establishment of a sample and illumination of an area of the sample in which it is desired to determine the effect of the electric field and / or the magnetic field by an electron beam in precession mode,
    - establishment of one or more diffraction shots,
    - analysis of the diffraction plate (s) to measure the disc offset corresponding to the transmitted beam and / or to the diffracted beams or to the reflected beam,
    - determination of the deflection angle of the transmitted electron beam and / or of the diffracted beams or of the reflected beam with respect to the incident beam.
    In the present application, the term "diffraction plate" means the set of signals collected by a multichannel detector comprising at least 4 channels or pixels, which gives information on the directions in which the particles of the incident beam propagate after their interaction with the sample. In a transmission microscope, this information is traditionally obtained in the "diffraction" mode for which the position of the detector is conjugated to the focal plane of the objective lens. A diffraction plate comprises a transmitted disc and diffracted discs or a disc due to the reflected beam.
    The method measures the projection perpendicular to the beam of the electric field and / or the magnetic field internal to a material. Conversely, by knowing one and / or the other of these fields and by determining the value of the angle of deviation, one can determine other properties of the sample such as for example its dielectric constant, its refractive index. , its bevel angle ...
    The precession mode means that the incident beam performs at least one revolution, the incident beam forming an angle relative to the optical axis of the microscope, and generates a precession cone. The angle can be constant or not. In the case of a symmetric precession cone generated by a circle, the angle of the cone is called the precession angle.
    Illumination by an electron beam in precession mode makes it possible to average several directions of incidence, the diffraction discs obtained are then more homogeneous in intensity. In particular, the interference contrasts due to the coherent diffraction fade or disappear and one obtains homogeneous intensity diffraction discs with well defined contours, which allows to measure with precision their position and therefore the offset. between the discs of several diffraction patterns and thus to measure the influence of the electric field and / or the magnetic field on the electron beam and to deduce therefrom the value of the electric field and / or the magnetic field.
    Preferably, the information on the transmitted beam is used for the measurement of electric / magnetic fields and other properties, such as the bevel angle.
    Very advantageously, measurements are made in a vacuum without an electric or magnetic field or on a uniform sample which has no field. These measurements are then subtracted from the measurements made in the area that one wishes to measure in order to eliminate in particular the parasitic deflections which appear when the beam is translated.
    Provision may be made for additional measurements on diffraction patterns such as stress measurements in crystalline materials from first and second order diffracted discs.
    The position of the disks in the transmitted beam can advantageously be detected by software allowing the method to be automated.
    It is also possible to take measurements at different points in the area.
    The present invention therefore relates to a method for determining the deflection of an electron beam resulting from an electric field and / or a magnetic field and from the presence of a sample, the incident electron beam having an initial direction, comprising the steps:
    a) establishment of a sample and illumination of the sample by an electron beam in precession mode by means of an illumination device,
    b) establishment of at least one diffraction plate,
    c) analysis of the at least one diffraction plate to measure an offset of a disc corresponding to the transmitted beam and / or to the diffracted beams or to the reflected beam,
    d) determination of the deflection of the electron beam due to the sample with respect to the initial direction from the offset of said disc obtained in step c).
    Advantageously, the method comprises a step e) prior to step c) of making at least one diffraction plate in vacuum or of a diffraction plate with another sample and the shift from step c ) is obtained by comparing the diffraction patterns of steps b) and e).
    For example, in precession mode, the incident electron beam forms an angle between 0.01 ° and 10 °. The angle of the incident electron beam can vary.
    Preferably, each diffraction plate is established with the data supplied during at least one revolution, and preferably during several revolutions.
    The method advantageously comprises a step a1) between steps a) and b) of dynamic compensation of the inclination due to the precession mode.
    In an exemplary embodiment, step c) applies a cross correlation to determine the offset.
    Preferably, during step a) the incident electron beam has a diameter between 0.1 nm and 100 nm and / or the incident electron beam has an energy between 1 keV and several MeV.
    Steps a), b), c) and d) are for example carried out in n zones of the sample and stage e) is carried out for example in p zones, p being less than n, taken and a step of extrapolation to n zones is performed.
    During step c), the offsets in two orthogonal directions can be measured.
    The present invention also relates to a method for determining the value of the local electric field and / or the value of the local magnetic field of said sample applying the method of determination according to the invention, said method also comprising a step f) of determination the local electric field and / or the local magnetic field of said sample from the deflection angle determined in step d).
    The sample may include a bevel angle of known value, comprising the step of determining the optical index of the sample from the value of the deflection angle of the incident beam and the step of calculating the value of the local electric field and / or the value of the local magnetic field from the value of the optical index and the bevel angle.
    The present invention also relates to a method for determining the properties of the sample applying the method of determination according to the invention, and to the knowledge of the electric and / or magnetic field, for example of the dielectric constant of the sample or its internal potential.
    The present invention also relates to a method for determining the chemical composition of a sample comprising the application of the method of determination according to the invention and the performance of an EDX experiment.
    The present invention also relates to a method for determining the dielectric constant of a liquid sample applying the method of determination according to the invention, an electric field and / or a magnetic field of known value (s) being applied (s).
    The present invention also relates to a method for determining the bevel angle of a sample applying the method of determination according to the invention, the value of the local electric field and / or the value of the local magnetic field of the sample. being known.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on the basis of the description which follows and of the appended drawings in which:
    FIG. 1 is a schematic representation of an exemplary system allowing the implementation of the determination method according to the invention,
    FIG. 2 is a schematic representation of an electron beam deflected by an electric field,
    FIG. 3A is a diffraction plate in the case of a measurement in a vacuum and in the absence of an electric field and / or a magnetic field,
    - Figure 3B is a diffraction pattern of a sample of
    InGaN / GaN,
    FIG. 4A is a gray level representation of the X offset of the disk of the beam transmitted at 10 × 10 points measured in vacuum and in the absence of an electric field and / or a magnetic field,
    FIG. 4B is a gray level representation of the Y offset of the disk of the beam transmitted at 10 × 10 points measured in vacuum and in the absence of an electric field and / or a magnetic field of the sample,
    FIG. 5A is a gray level representation of the offset in X 10 of the disk of the beam transmitted at 150 × 10 points of the sample,
    FIG. 5B is a gray level representation of the Y offset of the disk of the beam transmitted at 150 × 10 points of the sample,
    FIG. 6A is a gray level representation of the X offset of the disk of the beam transmitted at 150 × 10 points of the sample corrected by the X offset measured in the vacuum of FIG. 4A extrapolated to 150 × 10 points,
    FIG. 6B is a gray level representation of the Y offset of the disk of the beam transmitted at 150 × 10 points of the sample corrected by the Y offset measured in the vacuum of FIG. 4A extrapolated to 150 × 10 points,
    FIG. 7 is a profile of the electric field E T perpendicular to the 20 electron beams and at the interfaces, calculated in MV / cm and determined from the offset of FIGS. 6A and 6B,
    FIG. 8 is a profile of the internal deformations e zz along the growth direction z in percentage determined from variations in distances between the transmitted disc and the spot (0002) of the diffraction plate,
    FIGS. 9A to 9C are schematic representations of an example of a method for measuring the dielectric constant of a fluid,
    - Figures 10A to 10C are schematic representations of optical diagrams illustrating the application of this method to the determination of the bevel angle of a sample knowing the local electric field of the sample or determining the local electric field of the sample knowing the bevel angle of the sample.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    The invention relates to a method for determining the deflection angle of an electron beam due to the presence of a local electric field and / or a local magnetic field in an environment in which diffraction by a electron beam can be produced, either by transmission or by reflection. In the latter case, the electron beam does not pass through the sample, the sample may then not be transparent to the electrons.
    It may be for example a crystalline or amorphous solid environment, for example a semiconductor material, a liquid environment, a gaseous environment, for example to determine for example the dielectric constant, or vacuum.
    For the sake of simplicity, the environment whose effect on the deflection of the electron beam is to be measured will be called a “sample”. In addition, the local electric field and the local magnetic field will be designated by "the field" except when it will be useful to distinguish them.
    As explained below, the present invention makes it possible, for example, to determine the component of the electric field or of the magnetic field which deflects the incident electron beam which is the transverse component. For simplicity in the following description, reference will be made to the determination of the field in general.
    In Figure 1, we can see a schematic representation of a system for implementing the determination method according to the invention.
    The measurement system comprises an electron microscope (ME) 2, either in transmission (MET) or in reflection (MEB), means for performing illumination in precession mode 4, a sample holder 6 and means 8 for collecting the beams transmitted and diffracted or reflected and obtain the diffraction patterns. The system also includes means 10 for processing the diffraction patterns and, in an exemplary embodiment, means for determining the value of the local electric field or the local magnetic field in the sample.
    The electron microscope is advantageously able to generate an electron beam of nanometric diameter and having a small angle of convergence, which makes it possible to have diffraction patterns on which the transmitted disc and the diffracted discs do not overlap or that their overlay is not too large and have better accuracy. The diameter at mid-height of the beam can vary from 0.1 nm to 100 nm and the angle of convergence can vary between approximately 0.0057 ° (0.1 mrad) and approximately 5.7 ° (100 mrad). Preferably, the energy of the beam is then between 1 keV and several MeV.
    An example of such a system is well known to those skilled in the art and is for example described in document US2015 / 0076346.
    The means for performing illumination in precession mode 4, for example coils 12 upstream of the sample holder 6 which are electrically supplied to control the angle a of deflection of the incident beam Fi relative to the optical axis X, called half precession angle so that the incident beam by moving generates a precession cone C as shown in FIG. 1. The fixed point O around which the incident beam Fi turns corresponds to the area of the sample which is analyzed. The values of a can vary from 0.01 ° to 10 ° and preferably between 0.1 ° and 1 °.
    Advantageously, the means for producing illumination in precession mode 4 include means for compensating for the effect of the deflection of the incident beam Fi on the transmitted beam. For example, these compensation means comprise coils 14 downstream of the sample holder which are electrically supplied so as to compensate for the effect of the deflection of the incident beam Fi on the transmitted beam. This compensation is also called “descan” correction.
    Alternatively, the precession function could be performed by rotating the sample.
    As a variant on compensation, it is possible to envisage carrying out this compensation by processing the signals measured by means of a shape recognition algorithm which uses cross-correlation.
    In an exemplary embodiment, the means 8 for collecting the transmitted beam, and possibly the diffracted beams or possibly the reflected beam, comprise for example a camera of the charge transfer receiver type or CCD camera (“Charge Coupled Device” in English terminology) -saxonne) or any other two-dimensional detector network with sufficient sampling, such as CMOS detectors arranged downstream of the sample holder.
    According to another exemplary embodiment, the detector can be composed of four detectors formed for example from a circle or a ring divided into four equal sectors on which the beam is initially centered.
    The coils 12 and 14 are connected to a control unit 18, as well as the CCD camera 8.
    We consider a system comprising a MET. The measurement method according to the present invention comprises the following steps, after placing the sample on the sample holder.
    a) illumination of the sample by the electron beam in precession mode,
    b) collection of transmitted and diffracted beams and generation of at least one diffraction plate,
    c) processing of said diffraction plate to determine the offset of the disc coming from the transmitted beam and / or from the diffracted beams or from the reflected beam.
    d) determination of the deflection angle.
    In the present application, we speak of the disc offset corresponding to the transmitted beam and / or to the diffracted beams or to the reflected beam. This offset is measured either relatively, if no measurement without sample has been carried out, or absolutely, if measurements without sample have been carried out. In the case of relative measurement, it is determined how the position of the disc varies when the electron beam is scanned over the area of interest. Relative measurements allow you to see how the fields vary over the area of interest, but there are no quantitative and absolute measures of the fields. Absolute measurements are used to determine the value of the fields. In addition, the absolute measurements make it possible to eliminate the parasitic shifts which are often introduced during the scanning of the beam. In certain cases, for example if a relative measurement is sufficient and / or if the measured offsets are greater than the parasitic offsets introduced by the scanning, a reference measurement is not necessary.
    During step a) the coils are supplied to set the incident beam Fi in motion so that it travels through a precession cone, with a precession angle a relative to the optical axis X of the microscope. The angle a can be constant, the cone is then a cone of revolution, i.e. generated by a circle.
    As a variant, a may vary during the measurement, the cone may then have any base, for example an elliptical base which would have the effect of giving more spatial resolution in one direction, since the precession slightly increases the size of the probe. .
    Electronic diffraction in precession mode is for example described in the document R. Vincent, P.A. Midgley "Double conical beom-rocking System for measurement of integrated electron diffraction intensities", Ultramicroscopy, 53 (1994) 271-282.
    The MET is adjusted so that the electron beam, more particularly the point O around which the electron beam rotates, is located close to the input face, i.e. the face receiving the incident beam, of the area that one wishes to measure. The optimal spatial resolution is obtained when the point O is on this input surface.
    For each diffraction pattern, the electron beam performs at least one revolution. Preferably, the beam performs several revolutions so as to have better homogeneity.
    The transmitted and diffracted beams are advantageously compensated so as to be stationary in the diffraction space. They are collected by the CCD camera and make it possible to establish diffraction patterns. Working in reciprocal space and not in real space has several advantages. On the one hand, the deflection of the incident beam due to the presence of the field and proportional to the intensity of this field causes a displacement of the beam transmitted in the reciprocal space, this displacement then makes it possible to go back to the intensity of the field. On the other hand the position of the diffraction spots in the reciprocal space is not affected by the shifts due to the scanning of the beam at the surface of the sample in the direct space, because a shift of the beam in space direct results in phase shifts in the diffracted beams, phase shifts not visible since only the intensities of the diffracted beams are recorded by the detector. The risks of having distorted measurements are reduced.
    In addition, the dynamic compensation of the transmitted and diffracted beams makes it possible to very significantly reduce the coherent diffraction contrasts inside the diffraction discs and to obtain diffraction discs with a homogeneous intensity and therefore having sharp edges which are easy to detect.
    In addition, by choosing a beam with a sufficiently small angle of convergence, for example included in the interval given above, for example equal to approximately 0.057 ° (1 mrad), the transmitted beam and the diffracted beams correspond to discs on diffraction patterns in reciprocal space, while in real space they correspond to complex and diffuse forms. Consequently, the displacement of the disc due to the influence of the field is more easily measurable all the more since, thanks to the illumination in precession mode, the contours of the discs are relatively sharp. Even in the case of amorphous materials with a strongly diffuse background, the transmitted disc remains discernible and usable. In the case of crystalline materials, the transmitted disc or a diffracted disc can be used. The use of a diffracted disc is however more complex since there is no reference of diffracted discs in vacuum and deformation effects can be added. It can advantageously be provided to take the barycenter of two discs symmetrical with respect to the transmitted beam, to overcome the effects of deformation. This makes it possible to work in reflection mode in which there are no transmitted beams.
    Thus the positions of the disks of the transmitted beam or of several diffracted disks can be precisely detected and compared in order to determine the offset due specifically to the fields. The determination of the intensity of the field is therefore also made more precise.
    The position of the transmitted and / or diffracted discs is measured on the two-dimensional detector. Any rotation between the observed sample and the detector is taken into account.
    It can be envisaged to calculate the offset only in one direction and to have a value of the field, for example when the direction of the field is known.
    Measurements in two orthogonal directions also make it possible to determine the orientation of the field in the plane.
    In the case of a two-dimensional detector, the offset of the transmitted beam disc is advantageously calculated automatically by means of an algorithm applied by software. The algorithm uses for example cross-correlation (“cross-correlation” in English terminology) of images to best determine the displacements of the transmitted beam. Alternatively, other methods for precisely detecting the positions of the diffraction spots applicable to the present invention are described in the document K. Müller, A. Rosenauer, M. Schowolter, J. Zweck, R. Fritz, K. Volz, “Stroin meosurement in semiconductor heterostructures by scanning transmission electron microscopy ”, Microsc. Microanal. 18 (2012) 995-1009.
    In the case of a detector having 4 segments, the offset of the transmitted beam disc can be measured using the known methods of DPC, i.e. by comparing the signals of two opposite segments. The intensity variations between the 4 sectors make it possible to measure the offset of the transmitted beam. The implementation of a 4-segment detector has the advantage of being faster than a method using a CMOS detector, since there are only 4 pixels to process. This method is however less precise.
    The algorithm can include the following steps.
    (1) In the series of diffraction images of the area of interest produced, a particular diffraction image is chosen as a reference.
    (2) On this reference radiograph, we choose to keep only the region close to the transmitted beam, that is to say the other tasks of the diffraction radiograph are deleted. Typically, the radius of the selected region has a radius of g / 2 where g is the distance between the transmitted beam and the nearest diffracted beam.
    (3) A cross correlation between the previous diffraction plate, called reference transmitted plate, and the plate to be studied is carried out. Advantageously, provision can be made for derivatives (for example by applying a Sobel filter) of the reference transmitted image and of the image or images to be studied before making the correlation product, which makes it possible to be more sensitive to the position. of the outline. The position of the maximum of this cross-correlation image directly gives the offset of the transmitted beam. This masking is advantageously carried out using the concept of masked Cross-correlation described in the document Podfield et al, “Masked object registration in the Fourrier domoin” IEEE Tronsoctions on Image Processing, 21 (5): 27062718, 2012.
    Very advantageously, the determination method according to the invention provides for a measurement step in a vacuum in the absence of a field, ie in the absence of the sample but under the same conditions, and during which the position of the disc of the transmitted beam is measured. The method also includes a step during which the measurement obtained in the absence of a sample is subtracted from the measurement made with the sample. The area scanned on the sample and the area scanned in vacuum preferably have the same physical dimension. However, the area scanned in a vacuum may have fewer points, the missing points being obtained by interpolating the measurements.
    In the vacuum and in the absence of field, a parasite due to a misalignment of the microscope can deflect the beam. Generally the parasitic deflections associated with the scanning of the beam are weak if the scanning system of the electron beam is correctly adjusted. However, the deflections introduced by the field or fields are very small, it follows that the parasitic deflections are comparatively large.
    These additional steps of measurement in a vacuum therefore make it possible advantageously to completely cancel this artefact. In addition, the positions obtained are normalized with respect to the position in a vacuum.
    We will now show how, from the position measurements of the transmitted disks, the field can be determined.
    The effect of an electric field on an electron beam Fi is shown diagrammatically in Figure 2.
    The electric field is broken down into a longitudinal component E L parallel to the optical axis of the beam and a transverse component E T to the optical axis of the beam.
    In the first order, only the transverse component E T has an influence that the direction of the beam Fl, the longitudinal component E L only has an effect on the acceleration or deceleration of the electrons. The method therefore makes it possible to measure the transverse component E T of the electric field perpendicular to the electron beam. To measure the longitudinal component E L the sample is rotated by a certain angle. Preferably, the sample is rotated by an angle of 90 °, but smaller angles, for example 30 ° also make it possible to measure the longitudinal component.
    F T the component (not shown) of the force applied by the electric field perpendicular to the direction of the beam is written:
    = q
    With q the electrical charge of the electron.
    F T can also be written:
    F L = m * e a ±
    With m * e the relativistic mass of the electron and a T the component of the average acceleration perpendicular to the direction of the beam. A T can be written a = i / jx i.
    Then - 'τ = r ± m *
    Now τ = 7r 0 t the distance over which the electric field extends, v 0 the initial speed of the electrons in the direction of the beam.
    So
    Ej_ - qt v ± = -; m * v Q
    Now the angle of deflection γ due to the effect of the electric field can be written: Y = arctan ( Vr / Vo) Γ ± / νθ
    It follows that:
    All the parameters of equation (I) are known except γ and t which can be determined.
    γ is determined by the measurement method according to the invention from the offset of transmitted discs and t is known or determined for example by methods using a focused electron probe and a network of 2D detectors in transmission, such as electronic diffraction of a converging beam or electronic diffraction of a converging beam averaged in position, as described in Transmission Electron Microscopy ", DB Williams and CB Carter, 2 nd edition, Springer, p. 352, or even using the energy spectrometry method or EDS (Energy dispersive spectrometry in English terminology) as described in document EP 3 032 244 A1
    For an electron beam of 200kV, equation I is written:
    = - y ! t - 3,438- 10 5 V
    For the determination of the magnetic field, we will not recall the calculations. As with the electric field, only the transverse component of the magnetic field is measurable.
    We can write :
    For an electron beam at 200 V, we obtain:
    = - y / t 1.649 10 _3 7.
    Thanks to the method according to the invention which makes it possible to know the value of y precisely, it is relatively easy to obtain the value of the local electric field or of the local magnetic field.
    The value of the determined field can be relative by comparing the offset of a diffraction plate with those measured on the other parts of the sample or with those measured on another sample, or it can be absolute by comparing it with a measured offset in vacuum in the absence of a field, this offset in vacuum is then measured as described below.
    The measurement method according to the invention can also be carried out in several zones of the sample, for example in different planes by considering the optical direction of the microscope and at different positions in each plane. Thus it is possible to have a map of the values of the field or fields in the sample.
    These measurements can be easily carried out by modifying the zones illuminated by the electron beam.
    We will now describe an example of measurement for determining the piezoelectric fields by the determination method according to the invention in a sample comprising structures with several quantum wells in InGaN / GaN on a substrate in GaN (0001).
    The sample is thinned to be observed along the zone axis [11-20] (Miller-Bravais indices, the electron beam will be parallel to this direction) which is perpendicular to the piezoelectric direction [0001], for example by focused ion beam (“focused ion beam milling” in English terminology).
    The transmission microscope used is a Titan3 G2 60-300 Ultimate® operating at 200 kV and the transmitted and diffracted beams are collected by a Gatan UltraScan® CCD camera.
    The microscope is adjusted to have a 0.7 nm diameter beam focused in a vacuum with a convergence angle of 1.8 mrad (0.1 °). The precession angle is fixed at 0.25 ° and the period of revolution of the beam is 0.1s. The exposure time of the CCD camera is 0.4 s equal to 4 times the period of revolution of the beam. Advantageously, a binning, or average over several pixels, is applied to the camera, for example for a binning of 4, this results in an image of 512 × 512 pixels.
    The beam current is around 50 pA and the thickness of the sample is around 150 nm.
    Preferably, the microscope is adjusted to reduce the parasitic deflections introduced by the scanning of the beam on the sample (adjustment of the pivot points in scanning mode) and the precession mode is set.
    The sample is placed in the microscope at the optical axis and at the eucentric height.
    The scanning is such that it includes the multilayers of InGaN / GaN and the GaN located under and above the stack. The sample consists of six layers of InGaN. The scanning is carried out over a length of 75 nm with steps of 0.5 nm. The scan includes 150 points along the stack and 10 points in the perpendicular direction.
    Measurements in a vacuum are carried out on an area of the same size, ie 75 nm by 5 nm. However, in vacuum, the number of points along the stack has been reduced to 10. In FIG. 3A we can see a diffraction plate for measurement in vacuum, only the disc of the transmitted beam is visible, and FIG. 3B shows an example of a diffraction pattern of the sample comprising the disc of the transmitted beam Dt and the discs of the diffracted beams surrounding the disc Dt.
    The offset is measured in the X, Y coordinate system of the detector.
    For vacuum measurements, the positions of the disks of the transmitted beam are measured by applying the algorithm mentioned above. They are represented in FIGS. 4A and 4B, FIG. 4A showing the offset in X and FIG. 4B showing the offset in Y. The positions of the 150 × 10 positions, corresponding to the scanning on the sample, are interpolated from the 10 × 10 experimental positions performed in a vacuum.
    The offsets are represented in gray level, the gray level scale extending from -3 pixels corresponds to black to +3 pixels corresponding to white.
    The measurements are then carried out on the sample, 150 × 10 diffraction shots are taken and the positions of the transmitted disks are extracted by applying the algorithm for each shot.
    In FIG. 5A we can see the offset along X of the disc and in FIG. 5B we can see the offset along Y at the 150x10 measurement positions.
    It will be understood that as many measurements could be made in a vacuum as in the sample, ie 150 x 10, but it has been found that making fewer measurements and interpolating these gave satisfactory results. saving time in data acquisition and processing.
    We then subtract from each of the offsets along X and along Y the interpolated offset in vacuum.
    The corrected offsets are obtained according to X (FIG. 6A) and according to Y (FIG. 6B). These offsets measured in pixels are converted into angles by calibrating the detector. To do this, in a traditional way, a diffraction plate of a known sample is used. Then we can calculate the component E T of the electric field using equation I. The thickness of the sample t = 150 nm, was determined from a diffraction plate obtained by electron diffraction by convergent beam (Convergent Beam Electron Diffraction or CBED in Anglo-Saxon terminology.
    In Figure 7, we can see shown the profile of E T in MV / cm along the stack of layers.
    The method according to the invention has the advantage of being able to carry out simultaneously with the measurement of the electric field experiments of measurements of mesh parameters, such measurements of mesh parameters are for example described in the document Rouviere et al., Improved strain precision with high spatial resolution using nanobeam precession electron diffraction, Applied Physics Letters 103, 241913, or EDX or EDS measurements for Energy Dispersive X-ray Spectrometry which determine the local chemical composition. EDX measurements in precession mode are for example described in the document Liao et al. Reduction of electron channeling in EDS using precession, Ultramicroscopy 126 (2013), 19-22.
    As indicated above, the method according to the invention using the precession mode makes it possible to reduce the effects of diffraction during the measurements. Since the sample can be oriented along a zone axis, the spatial resolution is determined only by the spread of the electron beam in the sample and can reach 1 nm.
    The method according to the invention can be applied to different thicknesses of sample, these being chosen so that the sample remains transparent to the electrons.
    Very advantageously, the scanning is automated and the processing of each photograph to determine the offset of the disc transmitted to each position is also carried out by means of software applying the algorithm. The measurements made are then precise and reproducible.
    The method according to the invention makes it possible to obtain a quantitative distribution of components of electric and magnetic fields perpendicular to the electron beam. It also makes it possible to obtain maps of internal potentials, potentials due to dopants, and piezoelectric and ferroelectric fields present in the sample.
    It can also be envisaged to apply this method while applying constraints to the sample, the method therefore allows in situ measurements.
    The method according to the invention can be applied by creating an electric field in a fluid. FIGS. 9A to 9C show an example of an experiment making it possible to determine the dielectric constant of a fluid using the method according to the invention, by creating an electric field in the fluid.
    In FIG. 9A, the vacuum prevails between the electrodes and no electric field is applied between the two electrodes 16. The incident beam Fi in precession mode is not deflected and retains the direction of the incident beam.
    In FIG. 9B, an electric field E between the two electrodes 16 is applied, which has the effect of deflecting the electron beam in precession mode with respect to the direction of the incident beam Fi.
    In FIG. 9C, a liquid or gaseous fluid sample 18 is introduced between the two charged electrodes 16 to which an electric field E is applied. The fluid can be introduced between the electrodes of an electron microscope using a cell such as that described in the document E.A. Lewis et.21. Chemical Communication, 2014, 50, 10019. As shown in Figure 9C, the deflection of the electron beam will be different due to the presence of the fluid compared to that in Figure 9B, the value of the dielectric constant of fluid being different from that of vacuum.
    This deviation can be measured using the method according to the invention.
    It is also possible to determine the bevel angle θ of a sample (see Figure 10) knowing the local electric field in the sample. The bevel angle θ is the angle between the entry face 22 of the incident beam Fi and the exit face 24 of the transmitted beam T.
    According to Snell-Descartes law for waves passing through an isotropic medium, the relation between the wavelength λ, the refractive indices of the medium n 2 and outside ni and the angles ûi and û 2 of the beam incident and the beam transmitted with respect to the normal to the faces (FIG. 10A) is as follows:
    sin -9 ^ n 2 sin ΰ 2 λ 2 ni
    The refractive index is equal to 1 if the sample is placed in a high vacuum. For typical conditions, the refractive index n 2 , hereinafter designated n, is slightly greater than 1 because it expresses the ratio of the wavelengths for an electron in vacuum and in the sample.
    The local electric field φ in the sample which accelerates the electrons when they pass through the sample is for solids typically between 10 eV and 30 eV.
    The wavelengths of the electron λ can be expressed using the Planck constant h, the kinetic energy of the electron E and the mass at rest of the electron E o according to the following relationship:
    hc λ = / yj2EE Q + E 2
    The refractive index n can then be written:
    = © = | 2 (£ + φ) Ε 0 + (Ε + φ) 2 n λ 2 J 2 EE o + E 2
    The refractive index of a material with a local electric field of 20eV for an incident electron beam accelerated by a voltage of 200 kV is equal to approximately: 1.000058.
    In the case of a sample with a bevel angle, the angular deviation y of the transmitted beam with respect to the incident beam (Figure 10B) can be expressed using the bevel angle Θ, the refractive index n of l 'sample, and the deflection angle ω χ of the incident beam relative to the input face according to the following relation.
    smÇàq) ^ _ θ
    By way of example (FIG. 10C), the bevel angle of a sample can be determined by knowing the local electric field in the sample, for example 20 eV, and the energy of the electron beam, for example 200 kV.
    γ = + arcsin nsin Θ - arcsin |
    The exit surface 24 through which the transmitted beam is such that it is a crystallographic plane, for example a cleavage plane or a surface of the substrate. The underside can then be placed perfectly perpendicular to the incident beam by orienting the sample using diffraction patterns.
    In this case, the angle between the normal to the entry face and the incident beam is equal to the bevel angle ω χ = Θ.
    The vacuum probe is recorded in the diffraction plane to measure position 0.
    The sample is then introduced into the beam path and the diffraction plane is again recorded. The deflection of the beam is measured at 0.002 ° (33.5 prad).
    By numerical methods, the bevel angle Θ is then estimated at
    30 °.
    Conversely if the bevel angle is known and not the local electric field, the refractive index n can be obtained from the angle γ determined using the above equation. The local electric field φ can then be deduced.
    权利要求:
    Claims (18)
    [1" id="c-fr-0001]
    1. Method for determining the deflection of an electron beam resulting from an electric field and / or a magnetic field and from the presence of a sample, the incident electron beam having an initial direction, comprising Steps :
    a) establishment of a sample and illumination of the sample by an electron beam in precession mode by means of an illumination device,
    b) establishment of at least one diffraction plate,
    c) analysis of the at least one diffraction plate to measure an offset of a disc corresponding to the transmitted beam and / or to the diffracted beams or to the reflected beam,
    d) determination of the deflection of the electron beam due to the sample with respect to the initial direction from the offset of said disc obtained in step c).
    [2" id="c-fr-0002]
    2. Determination method according to claim 1, comprising a step e) prior to step c) of producing at least one diffraction plate in vacuum or of a diffraction plate with another sample and in which the offset from step c) is obtained by comparing the diffraction patterns of steps b) and e).
    [3" id="c-fr-0003]
    3. Determination method according to claim 1 or 2, wherein, in precession mode, the incident electron beam (Fi) forms an angle between 0.01 ° and 10 °.
    [4" id="c-fr-0004]
    4. Method of determination according to claim 3, in which the angle, in precession mode, of the incident electron beam (Fi) varies.
    [5" id="c-fr-0005]
    5. Determination method according to one of claims 1 to 4, wherein each diffraction plate is established with the data provided during at least one revolution, advantageously several revolutions.
    [6" id="c-fr-0006]
    6. Determination method according to one of claims 1 to 5, comprising a step a1) between steps a) and b) of dynamic compensation of the inclination due to the precession mode.
    [7" id="c-fr-0007]
    7. Determination method according to one of claims 1 to 6 in combination with claim 2, wherein step c) applies a cross correlation to determine the offset.
    [8" id="c-fr-0008]
    8. Method of determination according to one of claims 1 to 7, wherein, during step a), the incident electron beam has a diameter between 0.1 nm and 100 nm.
    [9" id="c-fr-0009]
    9. Determination method according to one of claims 1 to 8, wherein, during step a), the incident electron beam (Fi) has an energy between 1 keV and several MeV.
    [10" id="c-fr-0010]
    10. Determination method according to one of claims 1 to 9, in which steps a), b), c) and d) are carried out in n zones of the sample.
    [11" id="c-fr-0011]
    11. The determination method according to claim 10 in combination with claim 2, in which step e) is carried out in p zones, p being less than n, and in which a step of extrapolation to n zones is carried out.
    [12" id="c-fr-0012]
    12. Determination method according to one of claims 1 to 11, wherein during step c), the shifts in two orthogonal directions are measured.
    [13" id="c-fr-0013]
    13. Method for determining the value of the local electric field and / or the value of the local magnetic field of said sample applying the method of determination according to one of claims 1 to 12, and comprising a step f) of determining the electric field local and / or the local magnetic field of said sample from the angle determined in step d).
    [14" id="c-fr-0014]
    14. Method for determining the value of the local electric field and / or the value of the local magnetic field of said sample according to claim 13, said sample comprising a bevel angle of known value, comprising the step of determining the index optic of the sample from the value of the deflection angle of the incident beam and the step of calculating the value of the local electric field and / or the value of the local magnetic field from the value of the optical index and bevel angle.
    [15" id="c-fr-0015]
    15. Method for determining properties of the sample applying the method of determination according to one of claims 1 to 12, and knowledge of the electric and / or magnetic field, for example of the dielectric constant of the sample or its internal potential.
    [16" id="c-fr-0016]
    16. Method for determining the chemical composition of a sample comprising the application of the method of determination according to one of claims 1 to 12 and carrying out an EDX experiment.
    [17" id="c-fr-0017]
    17. Method for determining the dielectric constant of a liquid sample applying the method of determination according to one of claims 1 to 12, an electric field and / or a magnetic field of known value (s) being applied ( s).
    [18" id="c-fr-0018]
    18. Method for determining the bevel angle of a sample applying the method of determination according to one of claims 1 to 12, the value of the local electric field and / or the value of the local magnetic field of the sample being known.
    S.60183
    1/6
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    同族专利:
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    FR3055969A1|2018-03-16|
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    FR3055969B1|2020-02-07|
    FR3055970B1|2020-06-26|
    US20180076005A1|2018-03-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20110049363A1|2009-08-27|2011-03-03|Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V.|Method and device for measuring electron diffraction of a sample|
    US20120025094A1|2010-07-29|2012-02-02|Carl Zeiss Nts Gmbh|Charged particle beam system|
    US8253099B2|2008-11-06|2012-08-28|Nanomegas Sprl|Methods and devices for high throughput crystal structure analysis by electron diffraction|
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    EP2823290B1|2012-03-08|2017-09-13|Tescan Tempe, LLC.|System and process for measuring strain in materials at high spatial resolution|
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    CN109166781A|2018-09-11|2019-01-08|镇江乐华电子科技有限公司|scanning transmission electron microscopic imaging method and system|
    JP2022020199A|2020-07-20|2022-02-01|日本電子株式会社|Image processing method and image processing equipment|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1658594|2016-09-14|
    FR1658594A|FR3055969B1|2016-09-14|2016-09-14|METHOD FOR DETERMINING THE DEFLECTION OF AN ELECTRON BEAM RESULTING FROM AN ELECTRIC FIELD AND / OR A MAGNETIC FIELD|
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